Title :
Temperature measurements of telecommunication lasers on a micrometre scale
Author :
Mansanares, A.M. ; Fournier, D. ; Boccara, A.C.
Author_Institution :
Univ. Pierre et Marie Curie, Paris, France
Abstract :
Temperature maps of laser diode facets obtained by photothermal reflectance microscopy are presented. Biased double heterojunction InGaAsP lasers were investigated. The temperature images reveal the influence of laser mode on the spatial distribution of the heat dissipation in the device. Moreover, a study of the modulated reflectance as a function of the injection current is achieved.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser variables measurement; photothermal effects; reflectivity; semiconductor lasers; temperature distribution; temperature measurement; DFB laser; InGaAsP-InP; biased double heterojunction InGaAsP lasers; heat dissipation spatial distribution; injection current; laser mode; micrometre scale; modulated reflectance; photothermal reflectance microscopy; telecommunication lasers; temperature maps; temperature measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931366
