DocumentCode
999337
Title
DFB and DBR lasers emitting at 980 nm
Author
Nichols, D.T. ; Lopata, J. ; Hobson, W.S. ; Sciortino, P.F. ; Dutta, N.K.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
Volume
29
Issue
23
fYear
1993
Firstpage
2035
Lastpage
2037
Abstract
The performance of DFB and DBR ridge waveguide lasers operating at 980 nm is reported. The DBR devices used a single growth step and gave singlemode output powers as high as 30 mW. The DFB devices used a two-step growth process in which the lower cladding and active regions were grown fast, the gratings were etched and then the upper cladding and p-contact layers were regrown on top of the grating. The DFB devices gave output powers as high as 75 mW.
Keywords
diffraction gratings; distributed Bragg reflector lasers; distributed feedback lasers; integrated optics; laser modes; laser transitions; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor lasers; 30 mW; 75 mW; 980 nm; DBR lasers; DFB devices; GaAs-AlGaAs-InGaAs; active regions; gratings; lower cladding; p-contact layers; ridge waveguide lasers; single growth step; singlemode output powers; two-step growth process; upper cladding;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931359
Filename
253957
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