• DocumentCode
    999338
  • Title

    Design of a temperature stable surface-acoustic-wave device on silicon

  • Author

    Cambon, G. ; Attal, J.

  • Author_Institution
    USTF Place E. Bataillon, Centre d´Etudes d´Electronique des Solides, Montpellier, France
  • Volume
    14
  • Issue
    17
  • fYear
    1978
  • Firstpage
    536
  • Lastpage
    538
  • Abstract
    We show that the SiO2/Si is a suitable surface-acoustic-wave structure for integrated oscillators. By adjusting the thickness of the SiO2, layer we can annul the first-order temperature coefficient of the phase delay. In this case the second-order temperature coefficient of frequency is equal to ¿4.5×10¿8/(°C)2 and it is close to that of the quartz ST-X.
  • Keywords
    oscillators; silicon; silicon compounds; surface acoustic wave devices; ultrasonic delay lines; Rayleigh mode propagation; Si-SiO2 structure; delay line; integrated oscillators; phase delay temperature coefficients; phase velocity; surface acoustic wave device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780364
  • Filename
    4249526
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=999338