Title :
Design of a temperature stable surface-acoustic-wave device on silicon
Author :
Cambon, G. ; Attal, J.
Author_Institution :
USTF Place E. Bataillon, Centre d´Etudes d´Electronique des Solides, Montpellier, France
Abstract :
We show that the SiO2/Si is a suitable surface-acoustic-wave structure for integrated oscillators. By adjusting the thickness of the SiO2, layer we can annul the first-order temperature coefficient of the phase delay. In this case the second-order temperature coefficient of frequency is equal to ¿4.5×10¿8/(°C)2 and it is close to that of the quartz ST-X.
Keywords :
oscillators; silicon; silicon compounds; surface acoustic wave devices; ultrasonic delay lines; Rayleigh mode propagation; Si-SiO2 structure; delay line; integrated oscillators; phase delay temperature coefficients; phase velocity; surface acoustic wave device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780364
