Title :
Temperature dependence of multiplication noise in silicon avalanche photodiodes
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
The temperature dependence of multiplication noise in silicon avalanche photodiodes with a low-high-low impurity density profile is calculated. The variation of multiplication noise by temperature change can be neglected in practical use at a constant multiplication factor, which is in agreement with experimental results.
Keywords :
avalanche photodiodes; electron device noise; silicon; Si avalanche photodiodes; breakdown voltage; impact ionisation coefficients; low high low impurity density profile; multiplication noise; temperature dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780366
