Title :
Oscillators Based on Monolithically Integrated AlN TFBARs
Author :
Norling, Martin ; Enlund, Johannes ; Katardjiev, Ilia ; Gevorgian, Spartak
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg
Abstract :
Oscillators based on AlN thin-film bulk acoustic resonators are designed, fabricated and measured. The circuits are realised as silicon-on-silicon multichip modules where SiGe transistors are flip-chip mounted on a novel carrier substrate which includes monolithically integrated resonators and passive components. The paper describes the development and processing of the carrier substrate and resonators, as well as the development of the oscillator circuits.
Keywords :
Ge-Si alloys; III-V semiconductors; MMIC oscillators; acoustic microwave devices; acoustic resonators; aluminium compounds; bulk acoustic wave devices; flip-chip devices; heterojunction bipolar transistors; microwave bipolar transistors; multichip modules; semiconductor device noise; silicon-on-insulator; thin film devices; wide band gap semiconductors; AlN-Si-SiGe; SiGe HBT; SiGe transistor; carrier substrate; flip-chip mount; frequency 2 GHz; microwave oscillator; monolithically integrated TFBAR; noise; oscillator circuit; passive components; silicon-on-silicon multichip module; thin film bulk acoustic resonator; Acoustic resonator; hybrid integration; multichip module (MCM); oscillator; thin-film bulk acoustic resonator (TFBAR); thin-film device;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2008.2007091
