• DocumentCode
    999492
  • Title

    Zinc contamination and misplaced p-n junctions in InP¿GaInPAs d.h. lasers

  • Author

    Coleman, J.J. ; Nash, F.R.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    14
  • Issue
    17
  • fYear
    1978
  • Firstpage
    558
  • Lastpage
    559
  • Abstract
    A serious problem involving the use of Zn in the formation of GaxIn1¿xPyAs1¿y double-heterostructure lasers is identified. Contamination of epitaxial layer solutions from Zn is shown to result in misplaced p-n junctions in these devices. The improvement in the laser characteristics of devices having correctly placed p-n junctions is demonstrated.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; semiconductor junction lasers; InP-GaInPAs double heterostructure lasers; Zn contamination; epitaxial layer solutions; laser output power characteristics; misplaced p-n junctions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780378
  • Filename
    4249540
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=999492