DocumentCode :
999517
Title :
F.E.T. oscillation frequency domain solution
Author :
Krowne, C.M.
Author_Institution :
Watkins-Johnson Company, Palo Alto, USA
Volume :
14
Issue :
17
fYear :
1978
Firstpage :
561
Lastpage :
562
Abstract :
A new approach is used to determine when the necessary condition for oscillation, Re (Za)<0, holds in a microwave oscillator. Here Za is the Schottky GaAs f.e.t. active network impedance. This analysis has been used to develop a computer program that calculates the frequencies at which the above condition holds. The computer program also provides inband impedances and reflection coefficients and has been utilised to study Ku-band y.i.g.-tuned oscillators. Bandwidth and initial frequency of oscillation curves as functions of f.e.t.-model lumped elements are generated from the computer program.
Keywords :
Schottky gate field effect transistors; active networks; circuit analysis computing; field effect transistor circuits; microwave oscillators; semiconductor device models; solid-state microwave circuits; FET oscillation frequency; Ku band YIG tuned oscillators; Schottky gate GaAs FET device; active network impedance; bandwidth; domain solution; inband impedances; microwave oscillator; reflection coefficients;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19780380
Filename :
4249542
Link To Document :
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