Title :
C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
Author :
Izumi, K. ; Doken, M. ; Ariyoshi, H.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Buried SiO2, layers were formed by oxygen-ion (14O+) implantation into silicon. The impurity distribution of the oxygen-implanted silicon substrate was analysed by auger spectroscopy. The epitaxially-grown silicon layer on this substrate showed a good monocrystalline structure, and a 19-stage c.m.o.s. ring oscillator exhibited high performance in operation.
Keywords :
field effect integrated circuits; ion implantation; auger spectroscopy; impurity distribution; ring oscillator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780397
