Title :
Monolithically integrated DBR lasers with simple tapered waveguide for low-loss fibre coupling
Author :
Kasaya, K. ; Kondo, Yuta ; Okamoto, Mitsuo ; Mitomi, O. ; Naganuma, M.
Author_Institution :
NTT Opto-Electron. Labs., Atsugi, Japan
Abstract :
Describes InGaAsP/InP 1.55 mu m distributed Bragg reflector lasers monolithically integrated with a laterally tapered waveguide on the output facet. The tapered waveguide region of the devices has a thick partially clad p-InP layer grown by selective growth. The growth and fabrication processing steps were the same as those used to make conventional DBR laser diodes. The lasers demonstrate good lasing characteristics, low-loss coupling of less than 2.8dB and +/-2 mu m misalignment tolerance with a flat-end singlemode fibre in both the lateral and vertical directions.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; optical fibres; semiconductor lasers; 1.55 mum; InGaAsP-InP; InGaAsP/InP; distributed Bragg reflector lasers; fabrication processing; flat-end singlemode fibre; integrated DBR lasers; lasing characteristics; lateral directions; low-loss fibre coupling; misalignment tolerance; optical communication; photonic ICs; selective growth; tapered waveguide; vertical directions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931381