Title :
Dynamic dipole-dipole interactions between excitons in quantum dots of different sizes
Author :
Matsueda, Hideaki ; Leosson, Kristjan ; Xu, Zhangcheng ; Hvam, Jorn M. ; Ducommun, Yann ; Hartmann, Arno ; Kapon, Eli
Author_Institution :
Dept. of Inf. Sci., Kochi Univ., Japan
fDate :
6/1/2004 12:00:00 AM
Abstract :
A model of the resonance dynamic dipole-dipole interaction between excitons confined in quantum dots (QDs) of different sizes at close enough distance is given in terms of parity inheritance and exchange of virtual photons. Microphotoluminescence spectra of GaAs-AlGaAs coupled QDs are proposed to be analyzed by this model, including features created by high-speed random switching, depending on the carrier configuration in and around the QD pair, between the dipole-dipole split states and the nonsplit states to give double peaks at both of the QDs.
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; photoluminescence; semiconductor quantum dots; GaAs-AlGaAs; GaAs-AlGaAs coupled QD; dipole-dipole nonsplit states; dipole-dipole split states; excitons; high-speed random switching; microphotoluminescence spectra; quantum dots; resonance dynamic dipole-dipole interactions; virtual photons exchange; Carrier confinement; Coherence; Excitons; Laboratories; Optical materials; Physics; Quantum computing; Quantum dots; Resonance; US Department of Transportation; $mu$-PL; Microphotoluminescence; QDs; RDDDI; VPHs; quantum dots; quantum gates; resonance dynamic dipole–dipole interaction; virtual photons;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2004.828559