Title :
Rectifying effect in boron nanowire devices
Author :
Wang, Dawei ; Otten, Carolyn Jones ; Buhro, William E. ; Lu, Jia G.
Author_Institution :
Dept. of Chem. Eng., Univ. of California, Irvine, CA, USA
fDate :
6/1/2004 12:00:00 AM
Abstract :
It has been found that Ni forms ohmic contacts and Ti forms Schottky-barrier contacts to boron nanowires (BNWs). Using two-step electron-beam lithography, Ni and Ti electrodes are subsequently attached onto the ends of a single BNW. As a result, a nanoscale rectifier is created using a BNW.
Keywords :
Schottky barriers; boron; electron beam lithography; nanowires; nickel; ohmic contacts; rectifiers; titanium; B; Ni electrodes; Schottky-barrier contacts; Ti electrodes; Ti-Ni; boron nanowire devices; nanoscale rectifier; ohmic contacts; rectifying effect; two-step electron-beam lithography; Boron; Electrodes; Electron beams; Lithography; Nanoscale devices; Ohmic contacts; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes; Boron nanowires; Schottky contact; ohmic contact; rectifiers;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2004.828542
