Author :
Moghe, S.B. ; Gutmann, R.J. ; Chudzick, M.J. ; Borrego, J.M.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; gamma-ray effects; neutron effects; GaAs MESFETs; channel trapping effects; fast neutron fluence; gamma dose; gamma irradiation; gate depletion layer; generation recombination noise; low frequency noise; neutron irradiation; noise enhancement;
