• DocumentCode
    999798
  • Title

    Erratum: Effect of neutron and gamma irradiation on the low-frequency noise in GaAs m.e.s.f.e.t.s

  • Author

    Moghe, S.B. ; Gutmann, R.J. ; Chudzick, M.J. ; Borrego, J.M.

  • Volume
    14
  • Issue
    22
  • fYear
    1978
  • Firstpage
    722
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; gamma-ray effects; neutron effects; GaAs MESFETs; channel trapping effects; fast neutron fluence; gamma dose; gamma irradiation; gate depletion layer; generation recombination noise; low frequency noise; neutron irradiation; noise enhancement;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780487
  • Filename
    4249572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=999798