Low Frequency Noise Characterization and Signal-to-Noise Ratio Optimization for Silicon Hall Cross Sensors

Author

Dongli Zhang ; Mingxiang Wang ; Kai Sun

Author_Institution

Dept. of Microelectron., Soochow Univ., Suzhou, China

Volume

3

Issue

4

fYear

2015

fDate

Jul-15

Firstpage

365

Lastpage

370

Abstract

In this paper, silicon-based Hall cross sensors with different device dimensions and carrier densities are designed and fabricated. Low frequency noise behavior regarding to the device dimension and carrier density of the Hall cross sensors has been successfully characterized. Based on the measured $1/f$ -dependent low frequency noise spectral density and the theoretically calculated geometrical factors using a finite-element analysis tool, the noise voltage is calculated and Hooge´s constant is reliably extracted. The signal-to-noise ratio is thus calculated and experimentally verified. This paper provides a guidance for the optimal design of Hall cross sensors.

Keywords

1/f noise; Hall effect devices; carrier density; electric sensing devices; elemental semiconductors; finite element analysis; optimisation; silicon; voltage measurement; 1/f-dependent low frequency noise spectral density; Hooge´s constant; Si; carrier density; device dimensions; finite element analysis; geometrical factors; noise voltage calculation; signal-to-noise ratio; signal-to-noise ratio optimization; silicon hall cross sensor; Doping; Low-frequency noise; Noise measurement; Sensors; Signal to noise ratio; Voltage measurement; 1/f; Hall; Noise; Sensors; Signal-to-Noise Ratio (SNR); noise; sensors; signal-to-noise ratio (SNR);

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2015.2418794

Filename

7076592