Title :
Free Charge Carriers Trapping Properties in Neutron-Irradiated DOFZ Silicon Pad Detectors
Author :
Weber, Jens ; Klingenberg, Reiner
Author_Institution :
Tech. Univ. Dortmund, Dortmund
Abstract :
Silicon pad-detectors fabricated from diffused oxygenated silicon were irradiated with reactor neutrons with fluences between 1 times 1014 neq/cm2 and 1 times 1015 neq/cm2. The transient current technique was used to measure the trapping probability for holes and electrons. The results obtained support the model of a linear increase with fluence. Also the temperature dependence of the trapping time constant for electrons is investigated. This temperature dependence was found independent on the irradiated fluence.
Keywords :
electron traps; hole traps; neutron effects; silicon radiation detectors; Si; free charge carrier trapping properties; neutron-irradiated DOFZ silicon pad detectors; oxygenated silicon; reactor neutrons; silicon pad-detector fabrication; transient current technique; trapping time constant; Charge carrier processes; Charge carriers; Electrodes; Electron traps; Inductors; Large Hadron Collider; Neutrons; Radiation detectors; Silicon radiation detectors; Temperature dependence; Charge collection; LHC; SuperLHC; neutron induced radiation damage of silicon pad detectors; transient current technique; trapping time;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2007.910855
