• DocumentCode
    999914
  • Title

    Planar n-GaAs/N-GaAlAs microwave diodes

  • Author

    Lechner, A. ; Kneidinger, M. ; Kuch, R.

  • Author_Institution
    Technical University Vienna, Institute fÿr Industrielle Elektronik, Vienna, Austria
  • Volume
    16
  • Issue
    1
  • fYear
    1980
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Planar microwave diodes have been fabricated from n-GaAs/N-(GaAl)As heterojunction layers grown on semi-insulating substrates by l.p.e. The diodes have successfully been used for detection and, for the first time, for down-conversion of X- and Ku-band signals, indicating that this type of diode is an attractive substitute for the Schottky-barrier diode.
  • Keywords
    III-V semiconductors; gallium arsenide; liquid phase epitaxial growth; microwave detectors; p-n heterojunctions; semiconductor diodes; solid-state microwave devices; Ku-band; LPE; SHF; X-band; microwave down conversion; n-GaAs/N-(GaAl)As heterojunction layers; n-GaAs/N-GaAlAs microwave diodes; planar microwave diodes; semiinsulating substrates;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800001
  • Filename
    4249584
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=999914