بررسي تجربي ثابت‌هاي اپتيكي ويفرسيليكان با استفاده از طيف بازتاب نور در بازۀ ‌انرژي eV 5-2

Experimental Analysis of Optical Constants of Silicon Wafer by Reflection Spectrum in the Energy Range of 2-5 eV

در اﯾﻦ ﻣﻘﺎﻟﻪ ﺿﺮﯾﺐ ﺷﮑﺴﺖ، ﺿﺮﯾﺐ ﺟﺬب و ﺛﺎﺑﺖﻫﺎي دياﻟﮑﺘﺮﯾﮏ وﯾﻔﺮ ﺳﯿﻠﯿﮑﺎن ﻧﻮع pﺑﺎ ﺟﻬﺖ )100( ﺑﺎ اﺳﺘﻔﺎده از ﻃﯿﻒ ﺑﺎزﺗﺎب ﻧﻮر از ﺳﻄﺢ ﺳﯿﻠﯿﮑﺎن ﺑﻪﻃﻮر ﺗﺠﺮﺑﯽ ﺑﺮرﺳﯽ ﺷﺪه اﺳﺖ. ﺑﺮرﺳﯽ ﺧﻮاص اﭘﺘﯿﮑﯽ اﯾﻦ وﯾﻔﺮ ﮐﻪ ﺑﻪﻋﻨﻮان زﯾﺮﻻﯾﮥ ﻣﻮجﺑﺮ ﻧﻮري اﺳﺘﻔﺎده ﻣﯽﺷﻮد اﻫﻤﯿﺖ وﯾﮋهاي دارد. ﺛﺎﺑﺖﻫﺎي اﭘﺘﯿﮑﯽ وﯾﻔﺮ ﺳﯿﻠﯿﮑﺎن ﺑﺎ اﺳﺘﻔﺎده از روش ﮐﺮاﻣﺮزﮐﺮوﻧﯿﮓ و دادهﻫﺎي ﺗﺠﺮﺑﯽ ﻃﯿﻒ ﺑﺎزﺗﺎب، ﻣﺤﺎﺳﺒﻪ ﺷﺪه و ﺳﭙﺲ ﻧﺘﺎﯾﺞ ﺑﺎ دادهﻫﺎي ﭼﻨﺪ ﻣﺮﺟﻊ ﻣﻘﺎﯾﺴﻪ ﺷﺪه اﺳﺖ. ﻧﺘﺎﯾﺞ، ﺗﻮاﻓﻖ ﺧﻮﺑﯽ ﺑﯿﻦ ﺛﺎﺑﺖﻫﺎي اﭘﺘﯿﮑﯽ ﻣﺮاﺟﻊ و دادهﻫﺎي ﺗﺠﺮﺑﯽ ﻃﯿﻒ ﺑﺎزﺗﺎب و ﻣﺤﺎﺳﺒﻪ ﺷﺪه ﺑﺮاي ﻧﻤﻮﻧﮥ ﻣﻮﺟﻮد در آزﻣﺎﯾﺸﮕﺎه ﺑﻪ روش ﮐﺮاﻣﺮز- ﮐﺮوﻧﯿﮓ وﺟﻮد دارد.

In this paper reflection index, absorption coefficient and optical constants of p-type silicon wafer with (100) orientation have been experimentally studied by using reflection spectrum from silicon surface. This wafer has been used as a substrate for fabrication of waveguide, so its optical properties have certain importance. In this paper, optical constants of Si wafer is calculated by using Kramers-Kronig method and reflection spectrum experimental data and then our results are compared with some references. The results have good agreement between optical constants of the references and reflection spectrum experimental data and calculated for existence sample in the Lab by using Kramers-Kronig method.