ﻃﺮاﺣﯽ و ﺗﺤﻠﯿﻞ ﻟﯿﺰر ﻧﯿﻤﻪ ﻫﺎدي ﺣﻠﻘﻮي ﺑﺎ ﻗﻔﻞ ﺗﺰرﯾﻘﯽ

Design and Analysis of Injection Locked Semiconductor Ring Laser

ﭼﮑﯿﺪه: در اﯾﻦ ﻣﻘﺎﻟﻪ ﺑﺮ اﺳﺎس ﻣﻌﺎدﻻت ﻧﺮخ ﻟﯿﺰر ﭘﯿﺮو، رواﺑﻂ ﺟﺪﯾﺪي ﺑﺮاي ﻓﺮﮐﺎﻧﺲ ﻧﺎﮐﻮﮐﯽ، ﭘﺎﺳﺦ ﻓﺮﮐﺎﻧﺴﯽ ﻣﺪوﻻﺳﯿﻮن ﻣﺴﺘﻘﯿﻢ ﻟﯿﺰر ﻧﯿﻤﻪ ﻫﺎدي ﺣﻠﻘﻮي ﺑﺎ ﻗﻔﻞ ﺗﺰرﯾﻘﯽ، ﭘﺎﺳﺦ ﻓﺮﮐﺎﻧﺴﯽ ﻣﺪوﻻﺳﯿﻮن داﻣﻨﻪ و ﻓﺎز ﻟﯿﺰر راﻫﺒﺮ ﺗﻮﺳﻌﻪ داده ﺷﺪ. ﺑﺎ اﻓﺰاﯾﺶ ﺗﻮان ﺗﺰرﯾﻖ ﻟﯿﺰر راﻫﺒﺮ ﻣﺸﺎﻫﺪه ﻣﯽ ﮔﺮدد ﮐﻪ ﭘﻬﻨﺎي ﻧﺎﺣﯿﻪ ﻗﻔﻞ ﺷﺪه، ﻓﺮﮐﺎﻧﺲ ﻧﻮﺳﺎﻧﺎت واﻫﻠﺸﯽ و ﭘﻬﻨﺎي ﺑﺎﻧﺪ ﻣﺪوﻻﺳﯿﻮن ﻫﺎي ﻣﺴـﺘﻘﯿﻢ ﻟﯿـﺰر ﭘﯿـﺮو و ﻫﻤﭽﻨﯿﻦ داﻣﻨﻪ و ﻓﺎز ﻟﯿﺰر راﻫﺒﺮ اﻓﺰاﯾﺶ ﻣﯽ ﯾﺎﺑﺪ. در ﻣﻘﺎﯾﺴﻪ ﺑﯿﻦ روش ﻫﺎي ﻣﺨﺘﻠﻒ ﻣﺪوﻻﺳﯿﻮن، ﻣﺪوﻻﺳﯿﻮن ﻓﺎز ﻟﯿﺰر راﻫﺒﺮ در ﺣﺎﻟﺘﯽ ﮐﻪ ﺳﯿﮕﻨﺎل ﭘﺎﺳﺦ، داﻣﻨﻪ ﻟﯿﺰر ﭘﯿﺮو اﺳﺖ ﺑﯿﺸﺘﺮﯾﻦ ﭘﻬﻨﺎي ﺑﺎﻧﺪ )80 ﺑﺮاﺑﺮ ﭘﺎﺳﺦ ﻓﺮﮐﺎﻧﺴﯽ ﻣﺪوﻻﺳـﯿﻮن ﻣﺴـﺘﻘﯿﻢ ﻟﯿـﺰر ﭘﯿـﺮو( را اراﺋـﻪ ﻣﯽ ﮐﻨﺪ.

In this paper, based on the rate equations model for injection locked semiconductor ring laser, new equations are developed for modelling the detuning frequency and direct modulation response of the slave laser as well as the amplitude and phase modulation response of the master laser. Results show that by increasing the injection power of the master laser, the dynamic characteristics of the slave laser are improved consequently, locking area range, relaxation oscillation frequency and slave laser direct modulation bandwidth as well as field amplitude and phase of the master laser are enhanced by comparing the result of different modulation schemes. It is observed that master phase modulation configuration provides the largest bandwidth while the output response is considered amplitude of the slave laser (80 times of the slave laser direct modulation frequency response).