روش جديد رشد افقي كريستال سيليكان براي ساخت ترانزيستورهاي لايه نازك بر روي شيشه

A New Method for Horizontal Growth of Silicon Crystalline in Fabrication of Thin Film Transistors on Glass

A new method for crystallization of silicon at low temperatures is reported which is suitable for realization of thin film transistors on glass subtract. In this technique the crystallization initiates into the localized seeds of nickel-silicide and progresses towards the area under the gate of the transistors. The lateral growth is enhanced in the presence of ultra-violet illumination during annealing and allowing growth at reduced temperatures. The crystallinity of the samples has been verified, by using scanning electron microscopy, transmission electron microscopy, X-ray diffraction and optical microscopy. Transistor fabrication has been achieved in ordinary glass substrates at temperatures below 400"C. A hole mobility of 50cm^2IVs has been extracted from. the electrical characteristics and further confirming the crystallinity of the layers.