ساخت باتري خورشيدي پيوندي P-N و اندازه گيري عمق پيوندگاه و بازده آن

In this practical work a solar cell was fabricated during several steps. First a p-type silicon wafer doped with boron was used as a p-type layer, then phosphorous as a donor impurity diffused in p-layer for forming an n-layer and consequently to make a silicon p-n junction (solar cell). Then, junction depth was measured. To uncrease efficiency of the solar cell, aluminum paste was used. To optimize the color cell efficiency, the temperature and time of diffusing of aluminum was determined (T=850 C, t=20 s) . To make ohmic contacts for solar cell, a large layer of titanium, paladium and silver on the back surface of silicon wafer and in the form of a grid on the front slurface of wafer was deposited . Then, current - voltage characteristics of solar cell was plotted. Typical efficiency of fabricated solar cell was 10.04% and its fill factor 0.72.