تاثير آالاينده‌هاي GE,SI و O بر خواص ترابري الكترويكي n-Gan كپه‌اي‌

The Effect of Si, Ge and O Dopants on Electrical Transport Properties of Bulk n-GaN

Due to the importance of GaN as a wide band gap semiconductor in electronic and optoelectronic devices the study of electrical transport properties of this material has been of interested to many researchers. In general, the presence of impurities and dislocations affect the intrinsic properties of semiconductors. Here our goal is a theoretical study for the effect of different n-type dopants (Si, Ge and O) on electrical properties in three samples of this material. Our calculations are based on charge neutrality and electron scattering mechanisms based on relaxation time approximation. The results of our analysis indicate that Si is an appropriate dopant with shallow energy level ( 17 me V), relative to the conduction band edge, whose presence leads to a relatively low dislocation density of about 10^9 cm^-2 In contrast, Ge and 0 correspond to a deeper impurity level of 19 and 28 meV, respectively. Also, the presence of such impurities leads to a higher dislocation and nitrogen vacancy concentrations of about 103 and 3 in this material.