پيشنهاد و بررسي ساختارهاي جديد براي FET ساخته شده با نانوتيوب كربني

Investigation of New Structures for Carbon Nanotube FETs

A carbon nanotube field effect transistor (CNTFET) with Sehottky contacts for the drain and the source has been investigated. It is shown that the saturation region of the transistor output characteristics is small. This limits the application of the transistor. To improve the saturation range in the output characteristics, new structures are proposed, and the simulation results are compared. The proposed structures have supperior output characteristics.