شبيه سازي رفتارگذاري الكترونها در si و GaAs با استفاده از روش دسته جمعي مونت كارلو

Ensemble Monte Carlo Simulation of the Electrons Transient Behavior in Si and GaAs

We have used ensemble monte carlo simulation method to investigate the electrons transient behavior in Si and GaAs, precisely. First, necessity of using this method, and then, the method itself has been described.Next, we have presented a model that is suitable for Si and GaAs band structure. Finally, we have demonstrated the simulation results and explained some phenomena such as overshoot in these materials.