پديد آورندگان :
بهاري، علي نويسنده دانشگاه مازندران,دانشكده علوم پايه; Bahari, A , حسن زاده، كبرا نويسنده دانشگاه مازندران,دانشكده علوم پايه; Hasanzadeh, K , اميرصادقي، مونا نويسنده دانشگاه مازندران,دانشكده علوم پايه; Amir Sadeghi, M , رودباري، ماندانا نويسنده دانشگاه مازندران,دانشكده علوم پايه; Roodbari, M
چكيده لاتين :
We have grown Ti02 and A1N under ultra high vacuum and high pressure conditions and studied their structures with using AES and SEM techniques. The obtained results show that an amorphous film of Ti02 and A1N could be formed on silicon substrate. Furthermore, Ti02 and A1N are high - K dielectric materials and they can thus be replaced to ultra thin gate oxide film.
