امكان به كارگيري نانولوله كربني تك ديواره به عنوان يك كانال در ترانزيستورهاي اثر ميداني

The Single Wall Carbon Nanotube Ability in Metal-Oxide-Semiconductor Nanotransistorʹs Channel

The ongoing race to use single wall carbon nanotubes as a channel of the Metal-Oxide-Semiconductor Field Effect Transistor in future computer chips and nanotransistor has led to a search for channels with stronger structure than current channel in CMOS. We have thus demonstrated a series of experiments to grow ultra thin oxide on Si(l 11) substrate and studied single wall carbon nanotube (SWCNT) structure to set if SWCNT can be a good candidate for future CMOS generation. The spectra and image have been taken with synchrotron radiation technique. In the present work with an energy-equivalent model we could calculate Young Modulus and show relation between Young modulus with length and diameter of tube. This work shows that armchair type of single wall carbon nanotube is stronger and can fill this gap.