Title of article :
Metal–semiconductor interfaces in CdTe crystals and
modification of their properties by laser pulses
Author/Authors :
V.A. Gnatyuk*، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
Current–voltage characteristics (CVC) have been investigated in high-resistivity CdTe(1 1 1) crystals with different
electrodes (Ag, In and Au) which were deposited before different surface treatments. An influence of laser irradiation with
nanosecond KrF laser pulses on the metal–CdTe interfaces, has been studied. Laser irradiation of CdTe crystals before and after
electrodes deposition transformed the structure of the near surface and interface regions, respectively, and changed CVC of the
barrier structures. Irradiation of CdTe crystals from the In contact side resulted in In doping. The laser-formed In/CdTe/Au diode
structures had good rectification properties and showed promise for nuclear radiation detectors.
Keywords :
Barrier structure , Current–voltage characteristic , CdTe crystal , laser irradiation , Doping , Nuclear detector
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science