Large well-aligned nanostructures of b-Ga2O3 synthesized by microwave plasma chemical vapor deposition

In this paper, we demonstrate the novel b-Ga2O3 nanostructures synthesized by microwave plasma chemical vapor deposition (MPCVD) of Ga droplet in the presence of Au catalysts at 600 W. The morphology and structure of the products were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), and X-ray diffraction (XRD). Large well alignment of network-like layered crystal b-Ga2O3 structures that consisted of many nanobelts were formed on the Au-coated silicon substrate under the suitable vapor concentration. These novel b-Ga2O3 nanostructures are expected to have potential application in functional nanodevices