Title of article :
Synthesis and characterization of Al–N codoped p-type ZnO
epitaxial films using high-temperature homo-buffer layer
Author/Authors :
Q.Y. Zhu، نويسنده , , Z.Z. Ye*، نويسنده , , G.D. Yuan، نويسنده , , J.Y. Huang، نويسنده , , L.P. Zhu، نويسنده , , B.H. Zhao، نويسنده , , J.G. Lu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Abstract :
Al–N codoped p-type ZnO thin films have been prepared by DC magnetron reactive sputtering reproducibly using a high-temperature (HT)
homo-buffer layer. The influence of HT buffer layer deposition time (Tht) on film properties was investigated by X-ray diffraction (XRD), scanning
electron micro-spectra (SEM) and Hall measurement. The Al–N codoped ZnO film was improved evidently in its crystal quality by varying the
value of Tht. Results of Hall effect showed that all of the Al–N codoped ZnO thin films were p-type conduction and had resistivity mainly below
50 V cm. The optimum deposition time of HT buffer layer is around 3 min from the comprehensive consideration of structural, electrical, and
optical properties. The obtained ZnO thin film can meet the need of application in optoelectronic devices based on ZnO.
Keywords :
p-Type conduction , DC magnetron reactive sputtering , Al–N codoping method , ZnO thin films
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science