Title of article :
Synthesis and characterization of Al–N codoped p-type ZnO epitaxial films using high-temperature homo-buffer layer
Author/Authors :
Q.Y. Zhu، نويسنده , , Z.Z. Ye*، نويسنده , , G.D. Yuan، نويسنده , , J.Y. Huang، نويسنده , , L.P. Zhu، نويسنده , , B.H. Zhao، نويسنده , , J.G. Lu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
4
From page :
1903
To page :
1906
Abstract :
Al–N codoped p-type ZnO thin films have been prepared by DC magnetron reactive sputtering reproducibly using a high-temperature (HT) homo-buffer layer. The influence of HT buffer layer deposition time (Tht) on film properties was investigated by X-ray diffraction (XRD), scanning electron micro-spectra (SEM) and Hall measurement. The Al–N codoped ZnO film was improved evidently in its crystal quality by varying the value of Tht. Results of Hall effect showed that all of the Al–N codoped ZnO thin films were p-type conduction and had resistivity mainly below 50 V cm. The optimum deposition time of HT buffer layer is around 3 min from the comprehensive consideration of structural, electrical, and optical properties. The obtained ZnO thin film can meet the need of application in optoelectronic devices based on ZnO.
Keywords :
p-Type conduction , DC magnetron reactive sputtering , Al–N codoping method , ZnO thin films
Journal title :
Applied Surface Science
Serial Year :
2006
Journal title :
Applied Surface Science
Record number :
1003105
Link To Document :
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