Author/Authors :
Erwu Niu، نويسنده , , Li Li، نويسنده , , Guohua Lv *، نويسنده , , Wenran Feng، نويسنده , , Huan Chen، نويسنده , , Songhua Fan، نويسنده , , Size Yang، نويسنده , , Xuanzong Yang، نويسنده ,
Abstract :
Tantalum nitride films were deposited on silicon wafer and steel substrates by cathodic vacuum arc in N2/Ar gas mixtures. The chemical
composition, crystalline microstructure and morphology of the films were investigated by X-ray diffraction (XRD), X-ray photoelectron
spectroscopy (XPS) and atomic force microscopy (AFM), respectively. According to the results, film composition and microstructure depends
strongly on the N2 partial pressure and the applied negative bias (Vs).
