Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

Silicon nitride (SiNX) film fabrication on polyethylene terephthalate (PET) substrates has been achieved at a low temperature (∼100 °C) by plasma enhanced chemical vapor deposition operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge of SiH4, H2 and N2 in near atmospheric pressures without the use of any inert gases such as He. The deposited films were characterized by X-ray photoelectron spectroscopy. Cross sections of the films were observed by scanning electron microscope (SEM). Despite the use of N2 in place of NH3, a high deposition rate (290 nm/min) was obtained by this near-atmospheric-pressure plasma.