Simulation of composition modification in ZnSe by nanosecond radiation of excimer laser

A numerical simulation of the composition modification induced in ZnSe by nanosecond irradiation of the KrF excimer laser (λ = 248 nm, τ = 20 ns) has been carried out. Intensive evaporation of components has shown to results in the material surface cooling and forming a nonmonotone temperature profile with maximum temperature in semiconductor volume at the distance of ∼6 nm from the surface. As a result of evaporation and diffusion of components formation of the near-surface layer with nonstoichiometric composition takes place and enrichment of selenium reaches maximum value not on the surface, but in the semiconductor volume.