Author/Authors :
M. Yang، نويسنده , , W.S. Deng، نويسنده , , Q. Chen، نويسنده , , Y.P. Feng، نويسنده , , L.M. Wong، نويسنده , , J.W. Chai، نويسنده , , J.S. Pan، نويسنده , , S.J. Wang، نويسنده , , C.M. Ng، نويسنده ,
Abstract :
High-image dielectrics SrZrO3 were prepared on Ge(0 0 1) substrate using pulse laser deposition, and band alignments and thermal annealing effects were studied with high resolution X-ray photoemission spectroscopy. Valence and conduction band offsets at this interface were measured to be 3.26 eV and 1.77 eV, respectively. Interfacial Ge oxide layers were found at the interface. After annealing at 600 imageC, the interfacial Ge oxide layers were eliminated, and the valence band offset increased to 3.50 eV, but the amorphous SrZrO3 became polycrystalline in the meantime.
