Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application

A new ternary rare oxide dielectric LaYbO3 film had been prepared on silicon wafers and quartz substrates by reactive sputtering method using a La–Yb metal target. A range of analysis techniques was performed to determine the optical band gap, thermal stability, and electrical property of the deposited samples. It was found the band gap of LaYbO3 film was about 5.8 eV. And the crystallization temperature for rapid thermal annealing (20 s) was between 900 and 950 °C. X-ray photoelectron spectroscopy results indicate the formation of the SiO2 and silicate in the interface between silicon wafer and LaYbO3 film. The dielectric constant is about 23 from the calculation of capacitance–voltage curve, which is comparable higher than previously reported La2O3 or Yb2O3 film.