Title of article :
Tuning photoresponse through size distribution control of silicon quantum dots
Author/Authors :
C. Xu، نويسنده , , Z.P. Li، نويسنده , , W. Pan، نويسنده , , W.Z. Shen، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Abstract :
We report a detailed experimental and theoretical investigation on the photocurrent characteristics of nanocrystalline Si thin films, with the emphasis on the effect of Si dot size distribution. Broader photocurrent response has been observed in Si quantum dots with larger size dispersion due to the improvement of light harvest. As a result of tunneling loss in the expanded energy distribution, we have demonstrated that there is a tradeoff between the absorption enhancement and reduced transport for the photocurrent intensity. The present work opens new strategy to maximize the photoresponse through size distribution control for quantum dot solar cell application.
Keywords :
Photoresponse , Size distribution , Silicon , Quantum dots
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science