Author/Authors :
D.J Paul، نويسنده , , SA Lynch، نويسنده , , R Bates، نويسنده , , Z Ikoni?، نويسنده , , R.W Kelsall، نويسنده , , P Harrison، نويسنده , , D.J. Norris، نويسنده , , S.L Liew، نويسنده , , A.G. Cullis، نويسنده , , D.D Arnone، نويسنده , , C.R Pidgeon، نويسنده , , P Murzyn، نويسنده , , J.-P.R Wells، نويسنده , , I.V Bradley، نويسنده ,
Abstract :
The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at View the MathML source (View the MathML source wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of View the MathML source below View the MathML source.
Keywords :
Si/SiGe , Intersubband , Electroluminescence , Quantum cascade
