Title of article :
Energy spectrum of carriers in Kane type quantum wells
Author/Authors :
A.M. Babayev، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2006
Abstract :
The electronic states of a Kane type semiconductor quantum well with magnetic field are theoretically investigated and compared with those of a quantum wire of the same size. Calculations are performed for a hard-wall confinement potential and the size dependence of the effective g-values in bare InSb type quantum well for electrons and light holes are found, respectively. It has been seen that the effective g-value of the electrons and light holes are decreased with the increasing of quantum well thickness.
Keywords :
g-factor , Quantum well , Spin–orbit coupling
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures