Monte Carlo model of cathodoluminescence characterization of AlAs/GaAs/AlAs laser diode

In the present paper, a Monte Carlo calculation model of AlAs/GaAs/AlAs nanostructure is presented in order to describe the influence of different parameters such as the thickness of quantum well and barrier as well as the diffusion length. The carrier excess generated during the collision of the incident electron with the atoms of the material (random walk) is calculated as a function of depth taking into account the confinement phenomenon within the quantum well. The radiative recombination of electron–hole pairs is collected as a light (CL signal). Numerical results obtained for two quantum wells (30 and 20 nm) are compared with experimental data.