Title of article :
Cyclotron-resonance line splitting in heavily doped p-type GaAs heterojunctions
Author/Authors :
Yuri B. Vasilyev، نويسنده , , Nikolai G. Kalugin، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2008
Abstract :
In this paper, we report on submillimeter magneto-absorption studies of heavily doped (1 0 0) AlGaAs/GaAs heterojunctions. We found that the CR spectra consist of two branches with cyclotron-resonance effective masses of m=0.18mo and 0.373mo. These values are close to those predicted theoretically, and can be ascribed to the inversion asymmetry-induced spin splitting. In addition, we observed anticrossing features in the CR spectra. We discuss a possible origin of such CR line behavior as a coupling of light and heavy holes.
Keywords :
GaAs , Spintronics , Cyclotron resonance
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures