Author/Authors :
M.V Maximov، نويسنده , , A.F Tsatsulʹnikov، نويسنده , , B.V Volovik، نويسنده , , D.A Bedarev، نويسنده , , A.E Zhukov، نويسنده , , A.R Kovsh، نويسنده , , N.A Maleev، نويسنده , , V.M Ustinov، نويسنده , , P.S Kopʹev، نويسنده , , Zh.I Alferov، نويسنده , , R Heitz، نويسنده , , N.N. Ledentsov 1، نويسنده , , D Bimberg، نويسنده ,
Abstract :
We have studied quantum dots (QDs) fabricated by activated spinodal decomposition (ASD) of an InGa(Al)As alloy deposited on top of self-organized InAs nanoscale stressors on GaAs substrate. Such a growth sequence results in a strong red shift of the PL emission down to View the MathML source at 300 K. This red shift is caused by the formation of In-rich areas in the vicinity of the InAs islands, which increase the effective dot size. Beyond a certain critical InAs composition or nominal thickness of the InGa(Al)As layer the PL line shifts back towards higher energies. Adding Al to the alloy increases the red shift for a given In concentration. Room temperature lasing near View the MathML source with threshold current densities of about View the MathML source was achieved for lasers based on three-fold stacked ASD-formed QDs, with a maximum cw output power of 2.7 W.
