Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (View the MathML source) have been employed in order to determine the hole concentration View the MathML source of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic region was performed using the above value of p, which gave the magnitude of p–d exchange energy View the MathML source.