Title of article :
Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field
Author/Authors :
T Omiya، نويسنده , , F Matsukura، نويسنده , , T Dietl، نويسنده , , Y Ohno، نويسنده , , T Sakon، نويسنده , , M Motokawa، نويسنده , , H Ohno، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2000
Pages :
5
From page :
976
To page :
980
Abstract :
Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (View the MathML source) have been employed in order to determine the hole concentration View the MathML source of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic region was performed using the above value of p, which gave the magnitude of p–d exchange energy View the MathML source.
Keywords :
(Ga , Mn)As , Diluted magnetic semiconductor , p–d exchange , Magnetotransport
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2000
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1049870
Link To Document :
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