Title of article :
Electronic structure of Ga1−xMnxAs studied by angle-resolved photoemission spectroscopy
Author/Authors :
J. Okabayashi and O. Rader، نويسنده , , A. Kimura، نويسنده , , O. Rader، نويسنده , , T. Mizokawa، نويسنده , , A. Fujimori، نويسنده , , T. Hayashi، نويسنده , , M. Tanaka، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2001
Abstract :
We have studied the electronic structure of Ga1−xMnxAs by angle-resolved photoemission spectroscopy. The effect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaAs. These states would be responsible for the anomalous transport properties of Ga1−xMnxAs.
Keywords :
Photoemission spectroscopy , Ga1?xMnxAs , Energy-band dispersion , Density of states
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
