Author/Authors :
M Dutta، نويسنده , , D Alexson، نويسنده , , L Bergman، نويسنده , , R.J. Nemanich Chair، نويسنده , , R Dupuis، نويسنده , , K.W Kim، نويسنده , , S Komirenko، نويسنده , , M Stroscio، نويسنده ,
Abstract :
Phonons in III–V nitrides are examined experimentally for dimensionally confined systems and for alloys of InGaN with a view towards understanding the phonon modes of these systems. Results are compared with the predictions of Loudonʹs model for uniaxial semiconductors. The modes of the InGaN system are compared with those of the AlGaN ternary alloy. The first Raman measurements of interface phonons in binary GaN–AlN superlattices are presented.
Keywords :
Confined optical phonons , Raman scattering , Wurtzites , Nitrides
