On the spin injection in ZnMnSe/ZnCdSe heterostructures

We present results from a detailed study of spin injection in thin II–VI wide band gap semiconductor heterostructures by magnetooptical spectroscopy. It is shown that efficient spin alignment can be achieved in a diluted magnetic semiconductor barrier (a layer of ZnMnSe or ZnMnSe/CdSe superlattice) as thin as View the MathML source. Rather efficient spin injection from such a thin spin aligner to a non-magnetic quantum well is demonstrated, even when the tunneling energy barrier is as thick as View the MathML source. The effect of spin relaxation process on spin injection is also closely examined.