Spin interference and Fabry–Pérot resonances in ferromagnet–semiconductor–ferromagnet devices

Magnetoconductance across permalloy/InAs(2DES)/permalloy double junctions in the ballistic limit is examined within the transfer-matrix formalism. We take into account Rashba spin–orbit interaction in the semiconductor as well as oblique modes in devices of finite widths and calculate conductance ratios View the MathML source between distinct geometries of the magnetizations in the source and drain electrodes. The appropriate spin-dependent boundary conditions yield magnetoconductance ratios View the MathML source of up to 1% and Fabry–Pérot type interferences.