Title of article :
Evidence for high negative charge densities in AlF3 coatings on oxidized silicon: a promising source for large drift fields
Author/Authors :
Dirk K?nig، نويسنده , , G. Ebest، نويسنده , , R. Scholz، نويسنده , , S. Gemming، نويسنده , , I. Thurzo، نويسنده , , T.U. Kampen and K. Horn، نويسنده , , D.R.T. Zahn، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Pages :
4
From page :
259
To page :
262
Abstract :
Fixed negative charges in coatings of silicon solar cells can serve as an efficient source for large drift fields, thereby passivating the silicon surface and improving charge separation of the electron–hole pairs. In the present work, we report on the evidence for a high negative charge density in AlF3 coatings on oxidized silicon. The existence of these charges is related to sub-stoichiometric Fluorine content close to the AlF3/SiO2 interface, as evidenced both in measurements and density functional calculations of an electron trapped in a fluorine vacancy.
Keywords :
Electron localization , Fixed charges , Fluorine , Density functional calculations , Drift fields
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2002
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1050575
Link To Document :
بازگشت