Title of article
Resonance and current instabilities in AlN/GaN resonant tunnelling diodes
Author/Authors
A.E. Belyaev، نويسنده , , O Makarovsky، نويسنده , , D.J Walker، نويسنده , , L Eaves، نويسنده , , C.T. Foxon، نويسنده , , S.V. Novikov، نويسنده , , L.X Zhao، نويسنده , , R.I Dykeman، نويسنده , , S.V Danylyuk، نويسنده , , S.A. Vitusevich، نويسنده , , M.J. Kappers، نويسنده , , J.S Barnard، نويسنده , , C.J. Humphreys، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
4
From page
752
To page
755
Abstract
GaN/AlGaN double barrier resonant tunnelling structures grown by molecular beam epitaxy on GaN templates have been studied. Peaks in the current–voltage (I(V)) characteristics are observed, which are similar to resonant peaks seen in conventional III–V-based devices. However, the behaviour of the peaks in I(V) depend upon the previous charge state of the device produced by electrical bias. Current instabilities are also observed at low voltages. The possible origin of the peaks in the I(V) at room temperature and View the MathML source is discussed.
Keywords
Resonant tunnelling structures , GaN , III–V semiconductors
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051069
Link To Document