Title of article :
Influence of In composition on the photoluminescence emission of In(Ga)As quantum dot bilayers
Author/Authors :
M.A. Migliorato، نويسنده , , M.J. Steer، نويسنده , , W.M. Soong، نويسنده , , C.M. Tey، نويسنده , , H-Y. Liu، نويسنده , , S.L Liew، نويسنده , , P. Navaretti، نويسنده , , D.J. Norris، نويسنده , , A.G. Cullis، نويسنده , , M. Hopkinson، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2005
Pages :
5
From page :
124
To page :
128
Abstract :
We discuss a novel approach to the optimisation of quantum dot bilayer structures grown by molecular beam epitaxy. Use of a kinetic segregation model has shown that a reduction of the In composition for the upper layer of a bilayer structure can be used to compensate for the excess In that exists on the surface prior to growth. Three samples have been grown with upper dot In compositions varying from 90% to 100% and have been investigated by means of optical spectroscopy and electron microscopy.
Keywords :
Quantum dots , Spectroscopy , Molecular beam epitaxy
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2005
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1051525
Link To Document :
بازگشت