Controlling anisotropy of GaSb(As)/GaAs quantum dots by self-assembled molecular beam epitaxy

A systematic study was performed to control the geometrical anisotropy of GaSb(As)/GaAs quantum dot structures formed by the Stranski–Krastanov growth mode of molecular beam epitaxy. In particular, effects of both the Sb4 beam flux and the As4 background pressure on the geometrical anisotropy were clarified and elongated QDs with lateral aspect ratio greater than 3 were successfully formed. Under a low As4 background pressure, As4 is found to act as surfactant to influence the adatom diffusion and change the density of QDs. By contrast, under high As4 background pressure, the intermixing of As and Sb takes place and reduces strains induced by the lattice mismatch.