• Title of article

    Si nanocrystals in silicon nitride: An ellipsometric study using parametric semiconductor models

  • Author/Authors

    P. Basa، نويسنده , , P. Petrik، نويسنده , , M. Fried، نويسنده , , L. Dobos، نويسنده , , B. Pecz ، نويسنده , , L. T?th، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2007
  • Pages
    4
  • From page
    76
  • To page
    79
  • Abstract
    Low-pressure chemical vapour deposited Si3N4/nc-Si/Si3N4 layers prepared on Si substrates were characterized by spectroscopic ellipsometry. Model Dielectric Function (MDF) was applied to obtain the thickness and the dielectric spectra of the middle nc-Si layer. Sensitive effect of the deposition time was obtained on the MDF parameters. A comparison is presented between the studied samples and reference materials.
  • Keywords
    Si nanocrystals , Spectroscopic ellipsometry , Dielectric function
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2007
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1052182

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=1052182