Title of article :
A new chemical method for the preparation of Ag2S thin films
Author/Authors :
B.R Sankapal، نويسنده , , R.S. Mane a، نويسنده , , C.D. Lokhande، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2000
Pages :
4
From page :
226
To page :
229
Abstract :
Semiconducting Ag2S thin films were deposited onto amorphous glass, and single crystalline wafer of Si(1 1 1) by using a new, simple and less expensive successive ionic layer adsorption and reaction (SILAR) chemical method. The XRD studies show that the crystallinity of Ag2S film depends on the type of substrate. The microstructural, optical and electrical properties of Ag2S films deposited onto glass substrate and subsequently annealed at various (373–573 K) temperatures in air were studied and results are reported.
Keywords :
Chemical method , Structural , Optical and electrical properties , Ag2S thin films
Journal title :
Materials Chemistry and Physics
Serial Year :
2000
Journal title :
Materials Chemistry and Physics
Record number :
1060243
Link To Document :
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