Author/Authors :
O.G.، Okhotnikov, نويسنده , , T.، Jouhti, نويسنده , , J.، Konttinen, نويسنده , , M.، Pessa, نويسنده , , S.، Karirinne, نويسنده ,
Abstract :
The paper describes the first monolithic GaAs-based semiconductor saturable absorber made for operation at 1.55 (mu)m. An epitaxially grown absorber mirror in the GaInNAs/GaAs system was successfully used to mode-lock an erbium-doped fibre laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55 (mu)m wavelength range.
